20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

Author

Klaime, K. ; Piron, R. ; Paranthoen, C. ; Batte, Thomas ; Grillot, F. ; Dehaese, O. ; Loualiche, S. ; Le Corre, A. ; Rosales, R. ; Merghem, K. ; Martinez, A. ; Ramdane, A.

Author_Institution

UEB INSA-RENNES, Foton, France

fYear

2012

fDate

27-30 Aug. 2012

Firstpage

181

Lastpage

184

Abstract

We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.

Keywords

III-V semiconductors; indium compounds; laser mode locking; molecular beam epitaxial growth; quantum dot lasers; (001) misoriented substrate; GSMBE grown QD structures; InAs-InP; RF spectral width; double wavelength emission; frequency 20 GHz to 83 GHz; gas source molecular beam epitaxy; high injection current; low pulse duration; mode locking properties; passive mode locking; single section devices; single section quantum dot mode-locked lasers; time 1.3 ps; Cavity resonators; Indium phosphide; Laser mode locking; Measurement by laser beam; Optical fibers; Optical pulses; Quantum dot lasers; Mode-locking; quantum dots (QDs); semiconductors laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2012 International Conference on

Conference_Location

Santa Barbara, CA

ISSN

1092-8669

Print_ISBN

978-1-4673-1725-2

Type

conf

DOI

10.1109/ICIPRM.2012.6403352

Filename

6403352