Effect of dielectric thickness on performance of dual gate organic field effect transistors

Author

Goswami, V. ; Kumar, Bijendra ; Kaushik, B.K. ; Yadav, K.L. ; Negi, Yuvraj Singh ; Majumder, Manoj Kumar

Author_Institution

Indian Inst. of Technol. Roorkee, Roorkee, India

fYear

2012

fDate

28-29 Dec. 2012

Firstpage

141

Lastpage

144

Abstract

In this research paper, performance characteristics of the various operating modes of dual gate organic field effect transistors (DG-OFETs) are analyzed Comparative analysis between single-gate and dual-gate OFETs is carried out. Further, effect of gate dielectric thickness (t_ox) variations ranging from 100nm to 200nm is investigated. Observations reveal that the electrical characteristics are strongly affected by the dielectric thickness. It has been observed that the percentage improvement in the current on-off ratio is 95.4% and transconductance is reduced by 40.5% with variation in dielectric thickness.

Keywords

dielectric properties; organic field effect transistors; DG-OFET; dual gate organic field effect transistors; dual-gate OFET; electrical characteristics; gate dielectric thickness effect; single-gate OFET; size 100 nm to 200 nm; Decision support systems; Intelligent systems; Current on-off ratio; dielectric thickness; mobility; organic field effect transistor; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4673-4699-3

Type

conf

DOI

10.1109/CODIS.2012.6422156

Filename

6422156