Development of RF-MEMS ohmic contact switch for mobile handsets applications

Author

Fujiwara, Toshihito ; Seki, Takaya ; Sato, Fumiaki ; Oba, Makoto

Author_Institution

PMEMS Project, OMRON Corp., Yasu, Japan

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

180

Lastpage

183

Abstract

Here, we propose a practical single pole double throw (SPDT)-structured RF-MEMS switch for mobile handsets applications. This RF-MEMS switch has a very low insertion loss of 0.18dB and a high isolation of 32dB, up to 3GHz. And this RF-MEMS switch achieves small size by using through silicon via (TSV) structure (2.5×1.6×0.4mm³). Moreover, in the last of this paper, we show the feasibility of 3 voltage drive by integrating a charge pump IC, since a low-voltage drive is indispensable for mobile handsets applications.

Keywords

microswitches; microwave integrated circuits; mobile handsets; three-dimensional integrated circuits; SPDT-structured RF-MEMS ohmic contact switch; TSV structure; charge pump IC; loss 0.18 dB; low-voltage drive; mobile handsets applications; single pole double throw-structured RF-MEMS ohmic contact switch; through silicon via structure; Actuators; Charge pumps; Contacts; Integrated circuits; Radio frequency; Substrates; Switches; Charge pumps; Electrostatic Actuator; Linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2012 42nd European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2215-7

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6459315