DocumentCode
594527
Title
X- and Ku-band internally matched GaN amplifiers with more than 100W output power
Author
Noto, H. ; Maehara, Hiroaki ; Uchida, Hironaga ; Koyanagi, Mitsumasa ; Utsumi, Hiroaki ; Nishihara, J. ; Otsuka, Hiroyuki ; Yamanaka, Keiji ; Nakayama, Makoto ; Hirano, Yoshikuni
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1075
Lastpage
1078
Abstract
In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.
Keywords
III-V semiconductors; gallium compounds; microwave power amplifiers; wide band gap semiconductors; GaN; Ku-band internally matched amplifiers; RF module size; X-band internally matched amplifiers; single solid state device; transistor power bars; Gallium nitride; HEMTs; MODFETs; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2012 42nd European
Conference_Location
Amsterdam
Print_ISBN
978-1-4673-2215-7
Electronic_ISBN
978-2-87487-026-2
Type
conf
Filename
6459316
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