Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel

Author

Chun-Yuan Chen ; Kuei-Shu Chang-Liao ; Li-Jung Liu ; Wei-Chieh Chen ; Tien-Ko Wang

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

35

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

1025

Lastpage

1027

Abstract

Operation characteristics in a polycrystalline silicon (poly-Si) nanowire (NW) charge-trapping (CT) flash memory device are studied with SiGe buried channel for the first time. Compared with the flash device with a general poly-Si NW channel, the device with SiGe buried channel shows improved programming and erasing speeds since the enhanced electric field in tunneling layer is enhanced by SiGe buried layer. The endurance characteristics are also improved by the SiGe buried channel while retention performances are retained. The SiGe buried channel is promising to CT flash device for 3D nonvolatile memory applications.

Keywords

Ge-Si alloys; elemental semiconductors; flash memories; nanowires; random-access storage; silicon; tunnelling; 3D nonvolatile memory application; CT; NW; Si-SiGe; buried channel; enhanced operation characteristics; polySi nanowire charge-trapping flash memory device; polycrystalline silicon; retention performances; tunneling layer; Ash; Logic gates; Performance evaluation; Programming; Silicon germanium; Tunneling; 3D NVM; SiGe buried channel; charge-trapping (CT) flash memory; poly-Si; siGe buried channel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2348714

Filename

6894156