DocumentCode
596942
Title
Dynamic range improvement in 2nd-order low-pass multibit ΣΔ modulators
Author
Barbieri, Alan ; Pernici, S. ; Nicollini, Germano
Author_Institution
ST-Ericsson, Agrate Brianza, Italy
fYear
2012
fDate
9-12 Dec. 2012
Firstpage
416
Lastpage
419
Abstract
A circuit improving medium and low signal level SINAD in low-pass 2nd-order double-sampled ΣΔ modulators is presented. It uses negligible silicon area without any power consumption. Basic understanding and detailed formulae have been confirmed by simulations and experimental results on a WCDMA baseband ADC fabricated in a 65nm CMOS process.
Keywords
CMOS integrated circuits; code division multiple access; sigma-delta modulation; CMOS process; WCDMA baseband; dynamic range improvement; second order low pass multibit sigma-delta modulator; second-order double sampled sigma-delta modulator; size 65 nm; Baseband; Dynamic range; Modulation; Multiaccess communication; Noise shaping; Receivers; Spread spectrum communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location
Seville
Print_ISBN
978-1-4673-1261-5
Electronic_ISBN
978-1-4673-1259-2
Type
conf
DOI
10.1109/ICECS.2012.6463661
Filename
6463661
Link To Document