A novel write-scheme for data integrity in memristor-based crossbar memories

The memristor is one among the most promising emerging technologies for enabling a new generation of Non Volatile Memories. The memristor operates faster than a Phase Change Memory (PCRAM) and has a simpler structure than a magnetic memory (MRAM), while making possible the design of cross-point structures in crossbars at very high density. The presence of sneak path currents however causes an increase in power consumption and a reduction in data integrity and performance. To overcome this issue a novel write method is proposed to reduce the effects of sneak paths. Extensive SPICE simulations are provided to evidence the advantages of the proposed method.