Modeling of power devices for enabling smart energy consumption

We have developed the surface-potential-based model HiSIM_HV for high-voltage MOSFET. The model solves the Poisson equation explicitly within the MOSFET part. The resistive drift region is modeled by considering the excess carrier concentration together with the velocity saturation effect. The internal node potential is determined to preserve the current continuity between the MOSFET part and the resistive drift part. The validity of the model has been investigated, where the special focus is given on the self-heating effect. The thermal network introduced to model the effect is verified with measurements. Investigations to simulate the temperature distribution within the chip are also discussed.