Performance improvement of reactive magnetron sputtering ZnO-TFT after annealing in N2 ambient

Bottom-gated ZnO-TFTs have been fabricated under different conditions, and the devices´ current-voltage properties are reported. The ZnO films are prepared by reactive magnetron sputtering, and then annealed in N₂ ambient at 300°C for 1hour. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the effect of N₂ annealing on the samples´ physical structures and electrical characteristics. After annealing, the experimental results show that ZnO-TFTs can exhibit excellent electrical properties while V_g changes from -10 to 70V, and I_on/I_off ratio is larger than 10⁶ and OFF-state current is smaller than 1.2×10^-10A as V_d=10V.