OFF-state induced threshold voltage relaxation after PBTI stress

Author

Kupke, S. ; Knebel, S. ; Roll, Guntrade ; Slesazeck, Stefan ; Mikolajick, Thomas ; Krause, G. ; Kurz, Gerhard

Author_Institution

NaMLab gGmbH/TU Dresden, Dresden, Germany

fYear

2012

fDate

14-18 Oct. 2012

Firstpage

95

Lastpage

98

Abstract

The influence of different relaxation biases on positive bias temperature instability (PBTI) recovery is investigated. The threshold voltage (V_th) relaxation after stress is found to be accelerated by OFF-state bias in comparison to zero volt recovery. 2D device simulations evidence an increase in the drain side channel potential as well as an increase in the minimum potential for short channel devices. The relaxation effect is attributed to an enhanced detrapping of charge carriers by the drain-gate electrical field and becomes significant for short channel device below 0.1 μm length.

Keywords

MOSFET; relaxation; stability; 2D device simulation evidence; MOSFET; OFF-state induced threshold voltage relaxation; PBTI stress; charge carriers; drain side channel potential; drain-gate electrical field; positive bias temperature instability recovery; Degradation; Electric potential; High K dielectric materials; Logic gates; MOSFETs; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4673-2749-7

Type

conf

DOI

10.1109/IIRW.2012.6468928

Filename

6468928