DocumentCode
598747
Title
DRAM operating states and burn in
Author
Ellis, W. ; Yip, G. ; Hong, Jonggi
Author_Institution
Rambus Inc., Sunnyvale, CA, USA
fYear
2012
fDate
14-18 Oct. 2012
Firstpage
144
Lastpage
146
Abstract
Observation of system level DRAM operations can provide insights for developing improved reliability screens such as burn-in. We instrumented a dual rank 4GB RDIMM to probe command bus traffic from the memory controller to the DRAMs on a server mother board. Internal DRAM operating states are derived by analyzing the command bus traffic. Analysis showed that when the controller uses an open page policy with bank interleaving, the active idle state can become the dominant bias configuration in activated arrays. This result can be applied to the development of an efficient burn in stress.
Keywords
DRAM chips; traffic; dominant bias configuration; dual rank 4GB RDIMM; memory controller; probe command bus traffic; reliability screens; system level DRAM operations; Clocks; Instruments; Junctions; Random access memory; Streaming media; Stress; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4673-2749-7
Type
conf
DOI
10.1109/IIRW.2012.6468941
Filename
6468941
Link To Document