• DocumentCode
    598747
  • Title

    DRAM operating states and burn in

  • Author

    Ellis, W. ; Yip, G. ; Hong, Jonggi

  • Author_Institution
    Rambus Inc., Sunnyvale, CA, USA
  • fYear
    2012
  • fDate
    14-18 Oct. 2012
  • Firstpage
    144
  • Lastpage
    146
  • Abstract
    Observation of system level DRAM operations can provide insights for developing improved reliability screens such as burn-in. We instrumented a dual rank 4GB RDIMM to probe command bus traffic from the memory controller to the DRAMs on a server mother board. Internal DRAM operating states are derived by analyzing the command bus traffic. Analysis showed that when the controller uses an open page policy with bank interleaving, the active idle state can become the dominant bias configuration in activated arrays. This result can be applied to the development of an efficient burn in stress.
  • Keywords
    DRAM chips; traffic; dominant bias configuration; dual rank 4GB RDIMM; memory controller; probe command bus traffic; reliability screens; system level DRAM operations; Clocks; Instruments; Junctions; Random access memory; Streaming media; Stress; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4673-2749-7
  • Type

    conf

  • DOI
    10.1109/IIRW.2012.6468941
  • Filename
    6468941