DocumentCode
598755
Title
Electrical characterization of through-silicon vias (TSV) with different physical configurations
Author
Wen-Sheng Zhao ; Yong-Xin Guo ; Wen-Yan Yin
Author_Institution
Zhejiang Provincial Key Lab. for Sensing Technol., Zhejiang Univ., Hangzhou, China
fYear
2012
fDate
9-11 Dec. 2012
Firstpage
173
Lastpage
176
Abstract
Through-silicon vias (TSV) have been proposed to enable the “More-than-Moore” technology. In this paper, comparative studies on TSVs with different configurations are carried out based on their equivalent circuit model, with their electrical performance variations characterized together with coupling capacitance and conductance treated appropriately.
Keywords
equivalent circuits; three-dimensional integrated circuits; coupling capacitance; coupling conductance; electrical performance variations; equivalent circuit model; more-than-Moore technology; through silicon vias; Capacitance; Couplings; Equivalent circuits; Integrated circuit modeling; Resistance; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2012 IEEE
Conference_Location
Taipei
Print_ISBN
978-1-4673-1444-2
Electronic_ISBN
978-1-4673-1445-9
Type
conf
DOI
10.1109/EDAPS.2012.6469384
Filename
6469384
Link To Document