A Comparison of InGaAs and Ge photonic power converters for long wavelength power over fibre

Author

Allwood, G.A. ; Wild, G. ; Hinckley, S.

Author_Institution

Centre for Commun. Eng. Res., Edith Cowan Univ., Joondalup, WA, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

15

Lastpage

16

Abstract

Here, we present a comparison of the optical to electrical power conversion efficiency for off-the-shelf InGaAs and Ge photodiodes used as photonic power converters for power over fibre applications. The results show that, whilst the fill factor for the InGaAs photodiode is lower, the overall power conversion efficiency is better at long wavelengths due to the larger open circuit voltages.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; indium compounds; photodiodes; power convertors; Ge; Ge photonic power converters; InGaAs; InGaAs photonic power converters; electrical power conversion efficiency; long wavelength power over fibre; off-the-shelf Ge photodiodes; off-the-shelf InGaAs photodiodes; open circuit voltages; optical power conversion efficiency; Indium gallium arsenide; Optical attenuators; Optical fibers; Photodiodes; Photonics; Power conversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472337

Filename

6472337