Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures

Author

Willems van Beveren, L.H. ; McCallum, J.C. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Centre for Quantum Comput. & Commun. Technol. (CQC2T), Univ. of Melbourne, Melbourne, VIC, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

49

Lastpage

50

Abstract

In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.

Keywords

III-V semiconductors; field effect transistors; indium compounds; light emitting diodes; nanowires; InP; current-voltage spectroscopy; electronic transport; nanowire transistors; optoelectronic device characterization; red light emitting diode; temperature 40 K to 300 K; Educational institutions; Indium phosphide; Light emitting diodes; Nanoscale devices; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472354

Filename

6472354