DocumentCode
599865
Title
Designing single GaAs nanowire lasers
Author
Saxena, D. ; Mokkapati, S. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
101
Lastpage
102
Abstract
Design parameters for a single GaAs nanowire laser are determined by calculating the threshold gain for nanowire guided modes as a function of nanowire diameter and length. The material gain as a function of carrier density is modelled using theoretical microscopic gain model. The laser power required to optically pump these nanowires to reach threshold gain is also determined. These calculations provide guidance to grow the optimal structures that can lase at low threshold at room temperature (RT).
Keywords
III-V semiconductors; carrier density; gallium arsenide; nanowires; optical pumping; semiconductor lasers; semiconductor quantum wires; GaAs; carrier density; laser power; material gain; microscopic gain model; nanowire diameter; nanowire guided modes; nanowire lasers; nanowire length; optical pumping; optimal structures; threshold gain; Charge carrier density; Gallium arsenide; Laser modes; Laser theory; Optical pumping; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472380
Filename
6472380
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