Compositional and mechanical properties of PECVD silicon for thin-film optical applications

Author

Tripathi, Dhirendra Kumar ; Mao, Hongliang ; Silva, K. K. M. B. Dilusha ; Faraone, L.

Author_Institution

Microelectron. Res. Group, Univ. of Western Australia, Perth, WA, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

185

Lastpage

186

Abstract

In this paper we present Inductively coupled plasma chemical vapour deposition(ICPECVD) of amorphous Silicon (a-Si:H) thin films. By tuning the ICP power, RF power and pressure tensile and conformal a-Si:H films can be obtained. Such films are of great importance for the MEMS application. We also show that the optical absorption due to Si:H and Si-H₂ bond in the a-Si:H can be reduced by annealing the film at low temperature (500°C)by removing the hydrogen. The rapid and low temperature annealing ensures smooth a-Si:H films for the NIR applications in optical MEMS.

Keywords

Fourier transform spectra; amorphous semiconductors; annealing; elemental semiconductors; hydrogen; infrared spectra; plasma CVD; semiconductor growth; semiconductor thin films; silicon; tensile strength; ICPECVD; MEMS application; Si:H; amorphous silicon thin films; annealing; compositional properties; inductively coupled plasma chemical vapour deposition; mechanical properties; optical absorption; temperature 500 degC; tensile property; thin-film optical applications; Annealing; Integrated optics; Iterative closest point algorithm; Optical films; Radio frequency; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472422

Filename

6472422