• DocumentCode
    602605
  • Title

    i2WAP: Improving non-volatile cache lifetime by reducing inter- and intra-set write variations

  • Author

    Jue Wang ; Xiangyu Dong ; Yuan Xie ; Jouppi, N.P.

  • fYear
    2013
  • fDate
    23-27 Feb. 2013
  • Firstpage
    234
  • Lastpage
    245
  • Abstract
    Modern computers require large on-chip caches, but the scalability of traditional SRAM and eDRAM caches is constrained by leakage and cell density. Emerging non-volatile memory (NVM) is a promising alternative to build large on-chip caches. However, limited write endurance is a common problem for non-volatile memory technologies. In addition, today´s cache management might result in unbalanced write traffic to cache blocks causing heavily-written cache blocks to fail much earlier than others. Unfortunately, existing wear-leveling techniques for NVM-based main memories cannot be simply applied to NVM-based on-chip caches because cache writes have intra-set variations as well as inter-set variations. To solve this problem, we propose i2WAP, a new cache management policy that can reduce both inter- and intra-set write variations. i2WAP has two features: (1) Swap-Shift, an enhancement based on previous main memory wear-leveling to reduce cache inter-set write variations; (2) Probabilistic Set Line Flush, a novel technique to reduce cache intra-set write variations. Implementing i2WAP only needs two global counters and two global registers. By adopting i2WAP, we can improve the lifetime of on-chip non-volatile caches by 75% on average and up to 224%.
  • Keywords
    DRAM chips; SRAM chips; cache storage; storage management chips; NVM-based main memories; NVM-based on-chip caches; SRAM caches; cache interset write variations; cache management policy; eDRAM caches; heavily-written cache blocks; i2WAP; interset write variations; intraset write variations; limited write endurance problem; memory wear-leveling; nonvolatile cache lifetime; nonvolatile memory technologies; on-chip caches; on-chip nonvolatile caches; probabilistic set line flush; swap-shift; wear-leveling techniques; Energy consumption; Nonvolatile memory; Phase change materials; Radiation detectors; Random access memory; Registers; System-on-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Computer Architecture (HPCA2013), 2013 IEEE 19th International Symposium on
  • Conference_Location
    Shenzhen
  • ISSN
    1530-0897
  • Print_ISBN
    978-1-4673-5585-8
  • Type

    conf

  • DOI
    10.1109/HPCA.2013.6522322
  • Filename
    6522322