Model for investigation of Ion/Ioff ratios in short-channel junctionless double gate MOSFETs

Author

Holtij, Thomas ; Schwarz, Mathias ; Graef, Michael ; Hain, Fabian ; Kloes, Alexander ; Iniguez, B.

Author_Institution

Competence Center for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany

fYear

2013

fDate

19-21 March 2013

Firstpage

85

Lastpage

88

Abstract

We developed a 2D analytical model for junctionless double gate (DG) MOSFETs valid for all regions of device operation. The 2D solution for the potential enables us to predict electrical parameters, such as threshold voltage and subthreshold slope, as well as current and I_on/I_off ratios fast and accurate. From the results for the ratios we define an optimum point of device operation for different doping concentrations. The Poisson equation and the conformal mapping technique by Schwarz-Christoffel are used to build the model. A comparison of our 2D physics-based model has been done versus 2D TCAD Sentaurus simulation data.

Keywords

MOSFET; semiconductor device models; semiconductor doping; stochastic processes; 2D TCAD Sentaurus simulation data; 2D analytical model; 2D physics-based model; Poisson equation; Schwarz-Christoffel; doping concentrations; junctionless DG MOSFET; short-channel junctionless double gate MOSFET; Equations; Indexes; MOS devices; Mathematical model; Physics; Semiconductor device modeling; Transistors; Analytical modeling; Ion/Ioff ratio; conformal mapping; junctionless DG MOSFET; potential solution;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523497

Filename

6523497