Presence of Internal Field Emission Currents in GaAs Diodes

Author

Barrales-Guadarrama, V.R. ; Rodriguez-Rodriguez, M.E. ; Barrales-Guadarrama, R. ; Vazquez-Ceron, E.R.

Author_Institution

Univ. Autonoma Metropolitana-Azcapotzalco, Mexico City, Mexico

fYear

2012

fDate

19-23 Nov. 2012

Firstpage

377

Lastpage

383

Abstract

A forward and a reverse current bias study has been achieved in the design of GaAs diodes using the close space vapour deposition (CSVT) technique in order to find out the dominant current mechanisms. The diodes were characterized over a temperature range from 94 K to 293 K. The soundness of the dominant current in the range 1×10^-7 to 1×10^-2 A with an internal field emission current model of the form I=A·V_a·E·exp{-(4/3)·⌊(2m_T)^1/2/qħ⌋·(E_b^3/2/E)} has been demonstrated. These currents are the result of the presence of allocated states within the forbidden gap as proved by the model.

Keywords

III-V semiconductors; field emission; gallium arsenide; semiconductor diodes; vapour deposition; CSVT technique; allocated states; close space vapour deposition technique; dominant current mechanisms; dominant current soundness; forbidden gap; forward-reverse current bias study; gallium arsenide diodes; internal field emission current model; internal field emission currents; temperature 94 K to 293 K;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Robotics and Automotive Mechanics Conference (CERMA), 2012 IEEE Ninth

Conference_Location

Cuernavaca

Print_ISBN

978-1-4673-5096-9

Type

conf

DOI

10.1109/CERMA.2012.67

Filename

6524609