DocumentCode
605470
Title
Multi-CNTFETs for power device applications: Investigation of CCVD grown CNTs by means of atomic force microscopy
Author
Keyn, Martin ; Schwalke, Udo
Author_Institution
Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany
fYear
2013
fDate
26-28 March 2013
Firstpage
1
Lastpage
5
Abstract
In this work we use atomic force microscopy to explore carbon nanotubes (CNTs) which are grown by means of catalytic chemical vapor deposition (CCVD). The used process can be utilized to fabricate hundreds of carbon nanotube field-effect transistors (CNTFETs) for logic as well as for power device applications. The application type is selected through specially patterned source/drain contacts which either allow only one linking CNT (logic applications) or provide large scale parallelization of numerous CNTs (“multi-CNTFET”) for power device applications.
Keywords
atomic force microscopy; carbon nanotube field effect transistors; carbon nanotubes; catalysts; chemical vapour deposition; C; CCVD growth; CNTFET; atomic force microscopy; carbon nanotube field effect transistors; catalytic chemical vapor deposition; power devices; source-drain contacts; Annealing; Carbon nanotubes; Fabrication; Nickel; Plasmas; Silicon; Surface treatment; atomic force microscopy; carbon nanotube field-effect transistor; carbon nanotubes; catalytic chemical vapor deposition; power device application;
fLanguage
English
Publisher
ieee
Conference_Titel
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on
Conference_Location
Abu Dhabi
Print_ISBN
978-1-4673-6039-5
Electronic_ISBN
978-1-4673-6038-8
Type
conf
DOI
10.1109/DTIS.2013.6527767
Filename
6527767
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