• DocumentCode
    605470
  • Title

    Multi-CNTFETs for power device applications: Investigation of CCVD grown CNTs by means of atomic force microscopy

  • Author

    Keyn, Martin ; Schwalke, Udo

  • Author_Institution
    Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany
  • fYear
    2013
  • fDate
    26-28 March 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this work we use atomic force microscopy to explore carbon nanotubes (CNTs) which are grown by means of catalytic chemical vapor deposition (CCVD). The used process can be utilized to fabricate hundreds of carbon nanotube field-effect transistors (CNTFETs) for logic as well as for power device applications. The application type is selected through specially patterned source/drain contacts which either allow only one linking CNT (logic applications) or provide large scale parallelization of numerous CNTs (“multi-CNTFET”) for power device applications.
  • Keywords
    atomic force microscopy; carbon nanotube field effect transistors; carbon nanotubes; catalysts; chemical vapour deposition; C; CCVD growth; CNTFET; atomic force microscopy; carbon nanotube field effect transistors; catalytic chemical vapor deposition; power devices; source-drain contacts; Annealing; Carbon nanotubes; Fabrication; Nickel; Plasmas; Silicon; Surface treatment; atomic force microscopy; carbon nanotube field-effect transistor; carbon nanotubes; catalytic chemical vapor deposition; power device application;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on
  • Conference_Location
    Abu Dhabi
  • Print_ISBN
    978-1-4673-6039-5
  • Electronic_ISBN
    978-1-4673-6038-8
  • Type

    conf

  • DOI
    10.1109/DTIS.2013.6527767
  • Filename
    6527767