Elaboration and characterization of In2S3 thin films by spray pyrolysis with [S]/ [In] = 3 ratio

In₂S₃ thin films were elaborated onto glass substrate by spray pyrolysis method using sulphur-to-indium ratio ([S]/[In]) of 3 and different substrate temperatures. The as-deposited and annealing films were characterized by X-Ray Diffraction (XRD) for the structural, Energy Dispersive Spectroscopy (EDS) for the composition, Raman spectroscopy for samples quality and optical transmittance to measure gap energy. XRD revealed a β-In₂S₃ phase with a preferential orientation along (0 0 12) plane. Good stoichiometry was noticed in EDS measurement. Raman spectroscopy analysis shows a prominent of active modes of β-In₂S₃ films with annealing. This is confirming an improvement of structure cristallinity of all films and optical analysis shows a decrease of gap energy after annealing.