Verification of significant parameters in the deep-submicron MOS-FET simulation

The problem concerned to the verification of the significant parameters of the compact deep-submicron MOS-FET model was investigated in the presented work. The screening experiments methodology is used for the extraction of the significant parameters from the entire set of the compact model parameters. The corresponding computer experiments were performed by means of the Silvaco complex intended for the technology and device design including deep-submicron MOSFET. Thus extracted parameters will be used in the developed deep-submicron MOSFET model for the simulation of the electrical characteristics taking into account quantum effects.