• DocumentCode
    610567
  • Title

    Sub-10nm 1T-1R cell design using HfOx based ReRAM cell

  • Author

    Jinwoo Noh ; Minseok Jo ; Chang Yong Kang ; Gilmer, D. ; Kirsch, P. ; Jammy, R. ; Lee, Jong Chul ; Byoung Hun Lee

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • fYear
    2013
  • fDate
    22-24 April 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The operation properties of ReRAM for 1T1R structure are simulated using semi-empirical circuit model. From the simulation result, it has been found that the operation of 1T1R structure is seriously affected by various parasitics and the performance of access transistor. For sensing operation, a read circuit using constant current source provided better stability than constant voltage source usually used for charge-based memory device.
  • Keywords
    constant current sources; hafnium compounds; random-access storage; 1T1R cell design; 1T1R structure; HfOx; ReRAM cell; access transistor; charge-based memory device; constant current source; read circuit; resistive random access memory; semiempirical circuit model; stability; Clocks; Delays; Integrated circuit modeling; Random access memory; Resistance; Simulation; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on
  • Conference_Location
    Hsinchu
  • Print_ISBN
    978-1-4673-3081-7
  • Electronic_ISBN
    978-1-4673-6422-5
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2013.6545581
  • Filename
    6545581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610567