Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure

Author

Jana, D. ; Maikap, S. ; Prakash, Aravind ; Lee, H.Y. ; Chen, W.S. ; Chen, F.T. ; Kao, Min-Chi ; Tsai, Mavis

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ. (CGU), Taoyuan, Taiwan

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

Promising resistive switching memory characteristics in a IrO_x/GdO_x/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 μA (60μW), long program/erase endurance of >10⁴ cycles, and excellent data retention of >10⁴ s at 85°C.

Keywords

gadolinium compounds; iridium compounds; low-power electronics; random-access storage; rough surfaces; surface roughness; tungsten; IrO_x-GdO_x-W; bottom electrode; current 20 muA; data retention; electric field; formation-free resistive switching memory; low power resistive switching memory; memory device; power 60 muW; program-erase endurance; repeatable switching cycles; surface roughness; temperature 85 degC; Electric fields; Electrodes; Materials; Resistance; Rough surfaces; Surface roughness; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545585

Filename

6545585