Study of ambient effect in active SiOx-based resistive switching memory

Author

Chang, Y.F. ; Chen, P.Y. ; Fowler, B. ; Chen, Y.T. ; Xue, Feng ; Wang, Yannan ; Zhou, Fen ; Lee, Jong Chul

Author_Institution

Dept. of ECE, Univ. of Texas at Austin, Austin, TX, USA

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

The active element of unipolar SiO_x-based resistive switching (RS) memory has been investigated. Testing over a range of temperatures and in different ambients provide information regarding filament growth characteristics and a possible packaging solution. Plausible SiO_x-based RS mechanisms are modeled and proposed based on trap transformation between H-bridge and H-doublet oxygen vacancy defects. Excellent reliability in multilevel operation and pulse response in the 50 ns regime demonstrates good potential for high-density, high-speed SiO_x-based RS memory.

Keywords

integrated circuit reliability; integrated circuit testing; random-access storage; silicon compounds; vacancies (crystal); H-doublet oxygen vacancy defects; RS memory; ReRAM; SiO_x; active based resistive switching memory; active element; ambient effect; filament growth characteristics; plausible based RS mechanisms; pulse response; reliability; resistance random access memory; time 50 ns; trap transformation; Packaging; Random access memory; Reliability; Resistance; Switches; Temperature; Testing; Ambient; SiOx; modeling; resistive switching;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545589

Filename

6545589