Low power negative capacitance FETs for future quantum-well body technology

Author

Chun Wing Yeung ; Khan, A.I. ; Sarker, A. ; Salahuddin, Sania ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA

fYear

2013

fDate

22-24 April 2013

Firstpage

1

Lastpage

2

Abstract

A non-hysteretic NCFET structure using thin quantum well body combines two future trends synergistically. Ultra-thin body is needed to suppress short-channel effects and sub-60mV/decade operation is needed to reduce power consumption drastically. NCFET happens to need ultra-thin body as thin as 0.5nm to achieve 0.3V operation. We used simulation results of thin Si body NCFET to illustrate the possibility of achieving 10pA/μm I_OFF, 200uA/um Ion with 0.3V supply voltage. Layered semiconductors would be ideal for this future technology.

Keywords

field effect transistors; low-power electronics; quantum well devices; silicon; Si; layered semiconductors; low power negative capacitance FET; nonhysteretic NCFET structure; quantum-well body technology; short channel effects; size 0.5 nm; ultra-thin body; voltage 0.3 V; CMOS integrated circuits; Capacitance; Iron; Logic gates; MOSFET; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4673-3081-7

Electronic_ISBN

978-1-4673-6422-5

Type

conf

DOI

10.1109/VLSI-TSA.2013.6545648

Filename

6545648