• DocumentCode
    610738
  • Title

    Ultrafast degenerate pump-probe studies of SI-GaAs and LT-GaAs

  • Author

    Anusha, P.T. ; Tewari, S.P. ; Rao, S.V.

  • Author_Institution
    Adv. Centre of Res. in High Energy Mater. (ACRHEM), Univ. of Hyderabad, Hyderabad, India
  • fYear
    2012
  • fDate
    9-12 Dec. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present the measurements of excited state dynamics in LT-GaAs, SI-GaAs using picosecond pump-probe experiment at 800 nm performed in non-resonant conditions (photon energy > Eg of GaAs). The intensity dependent dynamics are also investigated.
  • Keywords
    III-V semiconductors; carrier lifetime; excited states; gallium arsenide; high-speed optical techniques; infrared spectra; terahertz wave spectra; GaAs; carrier lifetime; excited state dynamics; low-temperature gallium arsenide; picosecond pump-probe experiment; semiinsulating gallium arsenide; terahertz radiation; ultrafast degenerate pump-probe study; wavelength 800 nm;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Fiber Optics and Photonics (PHOTONICS), 2012 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4673-4718-1
  • Type

    conf

  • Filename
    6545755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610738