• DocumentCode
    610832
  • Title

    Polarization-doped InGaN based blue light-emitting diode with reduced efficiency droop

  • Author

    Adhikari, Sulav ; Pal, Shovon ; Dhanavantri, C.

  • Author_Institution
    Optoelectron. Devices Group, Central Electron. Eng. Res. Inst. (CEERI), Pilani, India
  • fYear
    2012
  • fDate
    9-12 Dec. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    GaN/InGaN based light-emitting diode (LED) is designed exploiting the recently-discovered polarization-induced doping phenomena in III-nitride semiconductors. LED structure employing InGaN barrier, combined with the polarization-induced doped electron-blocking layer (EBL) shows promising results.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light polarisation; optical design techniques; semiconductor doping; wide band gap semiconductors; EBL; GaN-InGaN; III-nitride semiconductors; LED structure; polarization-doped InGaN based blue light-emitting diode; polarization-induced doped electron-blocking layer; polarization-induced doping phenomena; reduced efficiency droop;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Fiber Optics and Photonics (PHOTONICS), 2012 International Conference on
  • Conference_Location
    Chennai
  • Print_ISBN
    978-1-4673-4718-1
  • Type

    conf

  • Filename
    6545850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=610832