GaSb-Based Diode Lasers With Asymmetric Separate Confinement Heterostructure

Author

Rui Liang ; Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.

Author_Institution

State Univ. of New York at Stony Brook, Stony Brook, NY, USA

Volume

25

Issue

10

fYear

2013

fDate

15-May-13

Firstpage

925

Lastpage

928

Abstract

A design for GaSb-based type-I quantum well diode lasers with an AlGaInAsSb/GaInAsSb active region, GaSb and AlGaAsSb separate confinement layers, and an AlSb/InAs hole stopper is proposed. The suppression of carrier recombination outside of the active region leads to improved laser efficiency and temperature stability. At a heatsink temperature of 17°C, the 2-mm-long, 100-μm-wide, anti-/high-reflection coated devices demonstrate threshold current densities of ~ 350 A/cm² and emit ~ 220 mW of continuous wave output power at 3.15 μm.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; laser stability; semiconductor lasers; GaSb-based diode lasers; asymmetric separate confinement heterostructure; carrier recombination; continuous wave output power; heatsink temperature; hole stopper; laser efficiency; quantum well diode lasers; temperature stability; threshold current densities; Carrier stopper; GaSb-based; diode lasers; mid-infrared; separate confinement heterostructure; type-I quantum well (QW);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2256118

Filename

6493390