DocumentCode
614493
Title
Modeling of velocity «overshoot» in the multivalley semiconductors
Author
Bol, Konstantin ; Moskalyuk, Vladimir
Author_Institution
Phys. & Biomed. Electron. Dept., Nat. Tech. Univ. of Ukraine Kyiv Polytech. Inst., Kiev, Ukraine
fYear
2013
fDate
16-19 April 2013
Firstpage
123
Lastpage
125
Abstract
Using the relaxation equations of energy balance, momentum and occupation of valleys, the possibility of modeling of the effect of drift velocity "overshoot” is shown in multivalley semiconductors on the example of aluminium nitride.
Keywords
III-V semiconductors; aluminium compounds; electron relaxation time; many-valley semiconductors; wide band gap semiconductors; AlN; aluminium nitride; drift velocity overshoot effect; equations of momentum; multivalley semiconductors; relaxation equations of energy balance; valley occupation; Aluminum; Conferences; Electron mobility; Equations; Mathematical model; Monte Carlo methods; Nanotechnology; “overshoot” of drift velocity; aluminium nitride; energy relaxation; intervalley relaxation; multivalley semiconductors; times of momentum;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference
Conference_Location
Kiev
Print_ISBN
978-1-4673-4669-6
Type
conf
DOI
10.1109/ELNANO.2013.6552071
Filename
6552071
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