• DocumentCode
    615027
  • Title

    Evaluation of SiGe multiple quantum well modulators for short-reach, dense wavelength division multiplexed optical interconnects

  • Author

    Lentine, Anthony L. ; Kekatpure, Rohan D.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2013
  • fDate
    5-8 May 2013
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    By modeling temperature-dependent SiGe MQW electroabsorption, we calculate the number of allowed DWDM channels as a function of operating temperature, applied voltage, and a figure of merit related to the laser power penalty. We find that 20 to 40 DWDM channels at 100 GHz and 50 GHz channel spacing is possible in DWDM links with a ~12° temperature range with less than a 1 dB laser power penalty compared to the optimum single channel, single temperature case. The same number of channels can be supported over a 37° temperature range with a 3 dB power penalty.
  • Keywords
    Ge-Si alloys; channel spacing; electro-optical modulation; electroabsorption; optical communication equipment; optical interconnections; optical links; quantum well devices; semiconductor materials; semiconductor quantum wells; wavelength division multiplexing; DWDM channels; DWDM links; SiGe; SiGe multiple quantum well modulators; channel spacing; laser power penalty; short-reach dense wavelength division multiplexed optical interconnects; temperature-dependent SiGe MQW electroabsorption; Optical modulation; Optical resonators; Silicon; Silicon germanium; Temperature distribution; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference, 2013 IEEE
  • Conference_Location
    Santa Fe, NM
  • Print_ISBN
    978-1-4673-5061-7
  • Electronic_ISBN
    978-1-4673-5062-4
  • Type

    conf

  • DOI
    10.1109/OIC.2013.6552932
  • Filename
    6552932