Effect of In addition on mechanical properties of Sn-9Zn-In/Cu solder

Author

Yi-Ta Wang ; Cheng Jen Ho ; Hsien-Lung Tsai

Author_Institution

Dept. of Mech. & Electromech. Eng., Nat. ILan Univ., Ilan, Taiwan

fYear

2013

fDate

7-10 April 2013

Firstpage

1038

Lastpage

1041

Abstract

In this study, trace amounts (0.5-2 wt%) of indium (In) are added to the Pb-free Sn-9Zn solder. Expect to improve the mechanical properties and find out the optimum conditions of Sn-9Zn-In solder. Tests are conducted to measure microhardness and shear strength while microstructure and morphology of fracture surface are observed using scanning electron microscope with elemental composition analyzed by energy dispersive spectrometer. Results show that addition of In to Sn-9Zn solder alloy leads to needle-shaped precipitates formed in the substrate. This not only increases micro-hardness, but also enhances shear strength at Sn-9Zn-In/Cu solder joints. Improvements in both micro-hardness and shear strength confirm that adding In to the solder alloy can contribute to better mechanical properties of Sn-9Zn-In/Cu joints with proper control of soldering temperature and time.

Keywords

X-ray chemical analysis; copper alloys; crystal microstructure; fracture; indium alloys; microhardness; precipitation; scanning electron microscopy; shear strength; soldering; solders; surface morphology; tin alloys; zinc alloys; EDS; In addition effect; Pb-free Sn-Zn solder; SEM; Sn-Zn-In/Cu solder joints; SnZnIn-Cu; elemental composition; energy dispersive spectrometer; fracture surface microstructure; fracture surface morphology; mechanical properties; microhardness; needle-shaped precipitates; optimum conditions; scanning electron microscope; shear strength; solder alloy; soldering temperature control; soldering time control; Aging; Compounds; Intermetallic; Mechanical factors; Soldering; Substrates; Pb-free; indium; mechanical properties; solder alloy;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on

Conference_Location

Suzhou

Electronic_ISBN

978-1-4673-6351-8

Type

conf

DOI

10.1109/NEMS.2013.6559900

Filename

6559900