Tunable graphene nanomesh semiconductor: Design, fabrication, and characterization

This paper reported a technique for tuning graphene semiconductor properties by introducing nanoholes into single- and few-layer graphene films. A simple nanofabrication technique has been demonstrated for making periodic nanoholes on pristine graphene in a mask-free and time-efficient manner via direct e-beam writing which was done by simply scanning the graphene area that is covered with EBL resist and then etching the scanned area by oxygen plasma. Parameters of e-beam lithography (EBL) (acceleration voltage, beam current, EBL resist thickness, and scanning area) were fine-tuned to optimize the dimensions of the nanomesh. Finally, Graphene field effect transistors were fabricated and characterized experimentally.