Self-aligned quantum-dot growth for single-photon sources

Author

Pohl, U.W. ; Strittmatter, A. ; Schulze, J.-H. ; Quandt, D. ; Germann, T.D. ; Unrau, W. ; Heindel, T. ; Hitzemann, O. ; Bimberg, Dieter ; Reitzenstein, S.

Author_Institution

Inst. fzr Festkorperphys., Tech. Univ. Berlin, Berlin, Germany

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

The buried oxide current-aperture in a pin diode-structure is used to create a strain field for the self-aligned nucleation of site-controlled single quantum dots. A single-photon source fabricated applying this approach shows spectrally very narrow emission lines (FWHM ≤ 25 μeV) and spectrally pure single-photon emission with a second-order autocorrelation g⁽²⁾(0) = 0.05.

Keywords

nucleation; optical fabrication; p-i-n photodiodes; photoemission; semiconductor growth; semiconductor quantum dots; spectral line narrowing; FWHM; buried oxide current-aperture; pin diode-structure; second-order autocorrelation; self-aligned nucleation; self-aligned quantum-dot growth; single-photon sources; site-controlled single quantum dots; spectrally pure single-photon emission; spectrally very narrow emission lines; strain field; Conferences; Indium phosphide; Site-controlled quantum dots; single-photon sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562566

Filename

6562566