MOVPE growth of InAs/InP QDs on directly-bonded InP/Si substrate

Author

Matsumoto, Kaname ; Xinxin Zhang ; Kanaya, Yoshinori ; Shimomura, Kazuya

Author_Institution

Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

InP/Si substrate has been fabricated by employing wet-etching and wafer direct bonding technique. The surface of the InP/Si substrate was very smooth and no strain was observed. On top of the substrate, InAs/InP quantum dots (QDs) have been monolithically grown using metal organic vapor phase epitaxy (MOVPE). According to photo-luminescence (PL) measurement, almost the same intensity, peak wavelength and full width half of maximum (FWHM) have been observed compared to QDs on InP substrate.

Keywords

III-V semiconductors; MOCVD; etching; indium compounds; photoluminescence; semiconductor growth; vapour phase epitaxial growth; InAs-InP; InP-Si; MOVPE growth; directly-bonded substrate; metal organic vapor phase epitaxy; photoluminescence; wafer direct bonding; wet-etching; Bonding; Epitaxial growth; Epitaxial layers; Indium phosphide; Quantum dots; Silicon; Substrates; Directly-bonded InP/Si substrate; InAs/InP; Quantum dots; double-cap procedure; stranski-krastanov growth mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562577

Filename

6562577