Monte Carlo simulation of InAlAs/InGaAs HEMTs with buried gate

We carried out Monte Carlo (MC) simulation of InAlAs/InGaAs high electron mobility transistors (HEMTs) with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance g_{m_max} and gate capacitance C_g increase with increasing the buried depth d. The extent of increase in the g_{m_max} is more than that in C_g. As a result, the cutoff frequency f_T increases with increase the buried depth d. These phenomena agree with our previous experimental results.