Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer

Author

Hayashi, Yasuhiro ; Fukuda, Kenji ; Osabe, Ryo ; Suzuki, Jun-ichi ; Atsumi, Yuki ; JoonHyun Kang ; Nishiyama, Naoto ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser tuning; semiconductor laser arrays; semiconductor optical amplifiers; silicon; wafer bonding; waveguide lasers; GaInAsP-Si; III-V/Si hybrid technique; III-V/Si wafer bonding; current confinement layer; gain characteristics; multifunctional SOA array; multifunctional hybrid semiconductor optical amplifier array; waveguide width tuning; Optical device fabrication; Optical saturation; Optical waveguides; Semiconductor optical amplifiers; Silicon; AlInAs oxidation; III–V/Si hybrid integration; Semiconductor optical amplifier; Si photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562621

Filename

6562621