Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam

Author

Sondon, Santiago ; Falcon, A. ; Mandolesi, Pablo ; Julian, Pedro ; Vega, Nahuel ; Nesprias, Francisco ; Davidson, J. ; Palumbo, Francesca ; Debray, Mario

Author_Institution

GISEE, Univ. Nac. del Sur, Bahia Blanca, Argentina

fYear

2013

fDate

3-5 April 2013

Firstpage

1

Lastpage

5

Abstract

Testing of single event effects caused by heavy ions in a PLL implemented on a CMOS 90 nm technology is reported in this work. The diagnosis of the circuit vulnerability has been conducted with a heavy ion micro beam line facility at the TANDAR tandem accelerator facility. The accuracy of the positioning system has been evaluated and the radiation dose has been accurately characterized. Single event effects were induced in the circuit and a map of the spatial correlation for the most sensitive blocks has been obtained.

Keywords

CMOS integrated circuits; integrated circuit testing; phase locked loops; tandem accelerators; CMOS technology; PLL; TANDAR tandem accelerator facility; circuit vulnerability; heavy ion microbeam line facility; positioning system; radiation dose; radiation induced single event effects; single event effect testing; size 90 nm; spatial correlation; Detectors; Ions; Lasers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Workshop (LATW), 2013 14th Latin American

Conference_Location

Cordoba

Print_ISBN

978-1-4799-0595-9

Type

conf

DOI

10.1109/LATW.2013.6562682

Filename

6562682