DocumentCode
621266
Title
A compact model of hafnium-oxide-based resistive random access memory
Author
Puglisi, Francesco ; Pavan, Paolo ; Padovani, A. ; Larcher, Luca
Author_Institution
Dipt. di Ing. “Enzo Ferrari”, Univ. degli Studi di Modena e Reggio Emilia, Modena, Italy
fYear
2013
fDate
29-31 May 2013
Firstpage
85
Lastpage
88
Abstract
In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations. Simple I-V measurements are used to extract the model parameters. The model accurately reproduces the I-V curves of the switching cycles in different operating conditions.
Keywords
random-access storage; I-V curves; RRAM cell; compact model; cycle-to-cycle stochastic variation; hafnium oxide based resistive random access memory; switching cycles; Data models; Hafnium compounds; Integrated circuit modeling; Resistance; Stochastic processes; Switches; Temperature measurement; Compact Model; Hafnium Oxide; RRAM; Resistive Switching;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location
Pavia
Print_ISBN
978-1-4673-4740-2
Electronic_ISBN
978-1-4673-4741-9
Type
conf
DOI
10.1109/ICICDT.2013.6563309
Filename
6563309
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