Characterization and modeling of depletion-type nMOS transistors for RF switches with zero power consumption in ON-state

Author

Andrei, Cristian ; Raoulx, Denis ; Imbert, G. ; Hovens, Bart ; Scarpa, Andrea

Author_Institution

Design Platforms, NXP Semicond., Caen, France

fYear

2013

fDate

29-31 May 2013

Firstpage

183

Lastpage

186

Abstract

This paper presents the characterization methodology, RF parameter extractions, and compact modeling of a depletion type- nMOSFET transistor normally “ON” at 0V gate bias. The transistor is used as a RF switch with zero power consumption in on-state and it was fabricated in BiCMOS 0.25μm mature technology from NXP Semiconductors. The test structures of the RF switch are presented and the characteristics in term of small signal equivalent circuit are extracted.

Keywords

BiCMOS integrated circuits; MOSFET; field effect transistor switches; semiconductor device models; BiCMOS mature technology; NXP Semiconductors; RF parameter extractions; RF switches; compact modeling; depletion-type nMOS transistor characterization; depletion-type nMOS transistor modeling; size 0.25 mum; small-signal equivalent circuit; voltage 0 V; Capacitance; Capacitance measurement; Electrical resistance measurement; Logic gates; Radio frequency; Resistance; Transistors; S-parameters; depletion MOS transistor compact modeling; small signal equivalent circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2013 International Conference on

Conference_Location

Pavia

Print_ISBN

978-1-4673-4740-2

Electronic_ISBN

978-1-4673-4741-9

Type

conf

DOI

10.1109/ICICDT.2013.6563332

Filename

6563332