DocumentCode
621290
Title
High-speed and highly accurate evaluation of electrical characteristics in MOSFETs
Author
Teramoto, A. ; Sugawa, Shigetoshi ; Ohmi, Tadahiro
Author_Institution
New Ind. Creation Hatchery Center, Tohoku Univ., Sendai, Japan
fYear
2013
fDate
29-31 May 2013
Firstpage
187
Lastpage
190
Abstract
Threshold voltage variability, random telegraph signal, and leakage current of gate oxides and pn junctions of numerous MOSFETs are evaluated by the array test circuits. By converting from current signal of MOSFETs to the voltage signal in the test circuit, accurate and high speed measurement can be obtained. These numerous data of variability, noise, and leakage current caused by the defects in MOSFETs are very useful for the process development and constructing the device structures.
Keywords
MOSFET; leakage currents; MOSFET; electrical characteristics; gate oxides; leakage current; random telegraph signal; threshold voltage variability; Current measurement; Junctions; Leakage currents; Logic gates; MOSFET; Stress; Switches; MOSFET; Random telegraph signal; Vth variability; leakage current; test circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location
Pavia
Print_ISBN
978-1-4673-4740-2
Electronic_ISBN
978-1-4673-4741-9
Type
conf
DOI
10.1109/ICICDT.2013.6563333
Filename
6563333
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