Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design

Author

Vianello, E. ; Thomas, O. ; Harrand, M. ; Onkaraiah, S. ; Cabout, Thomas ; Traore, B. ; Diokh, T. ; Oucheikh, Houcine ; Perniola, L. ; Molas, G. ; Blaise, P. ; Nodin, J.F. ; Jalaguier, E. ; De Salvo, B.

Author_Institution

CEA-Leti, Grenoble, France

fYear

2013

fDate

29-31 May 2013

Firstpage

235

Lastpage

238

Abstract

This paper gives an overview of our research work on Oxide Resistive switching memory (OxRAM) at technology and design level. The OxRAM technology has been developed in order to be co-integrated with low-voltage advanced CMOS technologies. The device electrical characteristics show: (i) a switching time of 100ns at 1V, (ii) an excellent data retention at 150°C and (iii) a high endurance up to 10⁸ cycles. The second part of this paper focuses on circuit design. The benefits of 3D integration of non-volatile devices on CMOS are highlighted. Performance and area gains are discussed as well as new application features.

Keywords

CMOS memory circuits; electrical resistivity; hafnium compounds; integrated circuit design; low-power electronics; random-access storage; HfO₂; OxRAM technology; RRAM; back-end 3D integration; circuit design; data retention; design level; device electrical characteristics; low-voltage advanced CMOS technologies; low-voltage advanced IC digital design; nonvolatile device; oxide resistive switching memory; switching time; technology level; temperature 150 C; time 100 ns; voltage 1 V; CMOS integrated circuits; CMOS technology; Films; Hafnium compounds; Performance evaluation; Semiconductor device measurement; Switching circuits; 3D integration; IC digital design; RRAM; nonvolatile memories;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2013 International Conference on

Conference_Location

Pavia

Print_ISBN

978-1-4673-4740-2

Electronic_ISBN

978-1-4673-4741-9

Type

conf

DOI

10.1109/ICICDT.2013.6563344

Filename

6563344