Evaluation of SiC MOSFET in Buck converter

Author

Ting Ma ; Haihong Qin ; Bin Zhao ; Xin Nie ; Zhiming Wu

Author_Institution

Jiangsu Key Lab. of New Energy Generation & Power Conversion, Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China

fYear

2013

fDate

19-21 June 2013

Firstpage

1213

Lastpage

1216

Abstract

SiC device technology has gained much progress. However the advantages of the device level have not been clearly shown in a power conversion circuit. The purpose of this work is to apply the SiC device in a Buck converter and to evaluate the MOSFETs´ driving performance and switching losses for high switching frequency operation. The analysis is verified by the design and test results for a high frequency hard switching silicon carbide based Buck converter.

Keywords

DC-DC power convertors; MOSFET; power conversion; silicon compounds; switching convertors; wide band gap semiconductors; MOSFET driving performance evaluation; SiC; SiC MOSFET evaluation; SiC device technology; buck converter; high frequency hard switching silicon carbide; high switching frequency operation; power conversion circuit; switching loss evaluation; Logic gates; MOSFET; Optical switches; Resistance; Silicon carbide; Transient analysis; Buck; SiC MOSFET; drive; high frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics and Applications (ICIEA), 2013 8th IEEE Conference on

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4673-6320-4

Type

conf

DOI

10.1109/ICIEA.2013.6566551

Filename

6566551