A 100GHz active-varactor VCO and a bi-directionally injection-locked loop in 65nm CMOS

Author

Shinwon Kang ; Niknejad, Ali M.

Author_Institution

Berkeley Wireless Res. Center, Univ. of California at Berkeley, Berkeley, CA, USA

fYear

2013

fDate

2-4 June 2013

Firstpage

231

Lastpage

234

Abstract

A 100GHz fundamental active-varactor VCO and a bi-directionally injection-locked loop are demonstrated in 65nm CMOS. Without using a conventional passive varactor, the proposed VCO achieves a tuning range of 5.2% at 100GHz and a phase noise of -112.1dBc/Hz at 10MHz offset. By utilizing the proposed transmission-line-based capacitive coupling, four oscillators are injection-locked properly and the loop creates eight phases of the carrier and 6dB(=10log4) of phase noise improvement, realizing a measured phase noise is -118.8dBc/Hz at 10MHz offset.

Keywords

CMOS integrated circuits; circuit tuning; field effect MIMIC; injection locked oscillators; millimetre wave oscillators; transmission lines; varactors; voltage-controlled oscillators; CMOS technology; active varactor VCO; bidirectionally injection locked loop; frequency 100 GHz; passive varactor; phase noise; size 65 nm; transmission-line-based capacitive coupling; tuning range; CMOS integrated circuits; Couplings; Frequency measurement; Noise measurement; Phase noise; Voltage-controlled oscillators; 100GHz bi-directionally injection-locked loop; capacitive coupling; injection locking; transformer; transmission line; varactor; voltage-controlled oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE

Conference_Location

Seattle, WA

ISSN

1529-2517

Print_ISBN

978-1-4673-6059-3

Type

conf

DOI

10.1109/RFIC.2013.6569569

Filename

6569569