DocumentCode
626526
Title
Enabling Near-Threshold Voltage(NTV) operation in Multi-VDD cache for power reduction
Author
Yinhe Han ; Ying Wang ; Huawei Li ; Xiaowei Li
Author_Institution
State Key Lab. of Comput. Archit., Inst. of Comput. Technol., Beijing, China
fYear
2013
fDate
19-23 May 2013
Firstpage
337
Lastpage
340
Abstract
Power constraint for modern processors becomes a very serious problem with the increasing core counts and cache capacity in multi/many core processors. Compared with processing cores with mature techniques like DVFS to alleviate the situation, last level cache which consume largest portion of processor chip needs effective power management strategy. In this paper, we explore the feasibility of Near-Threshold Voltage(NTV) SRAM and Multi-Voltage Domain (Multi-VDD) for power reduction in large capacity cache. To prevent data corruption in cache, we propose redundancy-based data salvaging technique for fault recovery. To solve the dilemma of power reduction and reliability guarantee, we try to match vulnerable/invulnerable data sets to high/low voltage domains. Different from previous work, we take into consideration multi-bit errors and redundancy masking effects in Multi-VDD cache. Experimental results show that our Multi-VDD cache achieves considerable improvements in energy efficiency.
Keywords
SRAM chips; cache storage; integrated circuit reliability; DVFS; NTV SRAM; cache capacity; data corruption; energy efficiency; fault recovery; high-low voltage domains; last level cache; multiVDD cache; multimany core processors; multivoltage domain cache; near-threshold voltage operation SRAM; power constraint; power management strategy; power reduction; processor chip; redundancy masking effects; redundancy-based data salvaging technique; reliability guarantee; vulnerable-invulnerable data sets; Error correction codes; Low voltage; Power demand; Program processors; Random access memory; Redundancy;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location
Beijing
ISSN
0271-4302
Print_ISBN
978-1-4673-5760-9
Type
conf
DOI
10.1109/ISCAS.2013.6571849
Filename
6571849
Link To Document