Class-F power amplifier with 80.1% maximum PAE at 2 GHz for cellular base-station applications

Author

Taesong Hwang ; Jenshan Lin ; Azadet, Kamran ; Wilson, Ross S. ; Kiss, P. ; Abdelli, Said ; Laturell, Donald

Author_Institution

Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

fYear

2013

fDate

7-9 April 2013

Firstpage

1

Lastpage

3

Abstract

A GaN HEMT class-F power amplifier (PA) achieving a high maximum power added efficiency (PAE) is presented. The class-F PA exhibits maximum PAE of 80.1 % with an output power of 40.7 dBm at 2 GHz. The PA maintains PAE higher than 50% at 6-dB input back off. The PA shows PAE higher than 70% over 200-MHz frequency range from 1.9 GHz to 2.1 GHz. Source-pull and load-pull techniques in largesignal analysis were conducted to achieve optimum impedance terminations at fundamental and harmonics.

Keywords

cellular radio; high electron mobility transistors; power amplifiers; GaN; HEMT class-F power amplifier; cellular base-station applications; class-F PA; class-F power amplifier; frequency 1.9 GHz to 2.1 GHz; frequency 200 MHz; large-signal analysis; load-pull techniques; maximum PAE; maximum power added efficiency; optimum impedance terminations; source-pull techniques; Area measurement; Gallium nitride; HEMTs; Impedance matching; Large scale integration; Radio frequency; Silicon; HEMT; PAE; class-F PA; gallium nitride (GaN);

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2013 IEEE 14th Annual

Conference_Location

Orlando, FL

Print_ISBN

978-1-4673-5536-0

Electronic_ISBN

978-1-4673-5535-3

Type

conf

DOI

10.1109/WAMICON.2013.6572736

Filename

6572736