DocumentCode
628553
Title
An innovative embedded interposer carrier for high density interconnection
Author
Dyi-Chung Hu ; Tzvy-Jang Tseng ; Yu-Hua Chen ; Wei-Chung Lo
Author_Institution
Unimicron Technol. Corp, Hinchu, Taiwan
fYear
2013
fDate
28-31 May 2013
Firstpage
1332
Lastpage
1335
Abstract
It is well known that 3DIC integration is the next generation semiconductor technology with the advantages of small form factor, high performance and low power consumption. However the device TSV process and design rules are not mature. Assembly the chips on top of the Si interposer is the current most desirable method to achieve the requirement of good performance. In this study, a new packaging concept, the Embedded Interposer Carrier (EIC) technology was developed. It aims to solve some of the problems facing current interposer assemble issues. It eliminates the joining process of silicon interposer to the laminate carrier substrate. The concept of EIC is to embed one or multiple interposer chips into the build-up dielectric layers in the laminated substrate. The process development of EIC structure is investigated in this paper. EIC technology not only can shrink an electronic package and system size but also provide a better electronic performance for high-bandwidth applications. EIC technology can be one of the potential solutions for 3D System-in-Package.
Keywords
dielectric waveguides; electronics packaging; semiconductor technology; system-in-package; three-dimensional integrated circuits; 3D system in package; 3DIC integration; EIC structure; EIC technology; build-up dielectric layers; design rules; device TSV process; electronic package; embedded interposer carrier technology; high density interconnection; innovative embedded interposer carrier; laminate carrier substrate; laminated substrate; multiple interposer chips; semiconductor technology; silicon interposer; Films; Laminates; Passivation; Silicon; Substrates; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575745
Filename
6575745
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