• DocumentCode
    628555
  • Title

    DBC substrate in Si- and SiC-based power electronics modules: Design, fabrication and failure analysis

  • Author

    Ling Xu ; Yang Zhou ; Sheng Liu

  • Author_Institution
    State Key Lab. for Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci & Tech, Wuhan, China
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    1341
  • Lastpage
    1345
  • Abstract
    In this paper, the failure mechanisms of the direct bonding copper (DBC) substrate under the condition of temperature cycling are studied. The cyclic temperature considered ranges from -40°C to 200°C. Furthermore, finite element method is used to optimize the DBC substrate structure in order to reduce the thermal stress and improve the reliability and fatigue life of power modules. Various factors are taken into account to optimize the DBC substrate, such as the thicknesses of copper layer, with or without dimples on copper layer, and the angle of copper coating. The simulation results showed that thinner copper layer thickness, smaller copper coating angle, or copper layer with dimples could decrease the plastic strain at the edge of the substrate, which make the DBC substrate have a longer lifetime under temperature cycling condition.
  • Keywords
    elemental semiconductors; failure analysis; fatigue; finite element analysis; integrated circuit reliability; life testing; power electronics; silicon; silicon compounds; wide band gap semiconductors; Cu; DBC substrate; Si; Si-based power electronics modules; SiC; SiC-based power electronics modules; copper coating; copper layer; direct bonding copper substrate; failure analysis; fatigue life; finite element method; plastic strain; reliability; temperature cycling; thermal stress; Coatings; Copper; Fatigue; Plastics; Strain; Stress; Substrates; DBC substrate; Extremely low cycle fatigue life; FEM; Modeling; Optimization design; Thermal cycling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575747
  • Filename
    6575747