DocumentCode
628592
Title
NiFe-based Ball-limiting-metallurgy (BLM) for microbumps at 50μm pitch in 3D chip stacks
Author
Bing Dang ; Wright, S. ; Maria, Joana ; Tsang, Cornelia ; Andry, Paul ; Wiggins, Lovell ; Knickerbocker, J.
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2013
fDate
28-31 May 2013
Firstpage
1595
Lastpage
1599
Abstract
In this work, Pb-free microbumps at 50μm pitch with NiFe-based Ball-limiting-metallurgy (BLM) are fabricated and tested. Detailed microstructural analysis has been performed, which shows a uniform thin layer (~0.2μm) of FeSn2 Intermetallic Compound (IMC) is formed between the Pb-free solder and NiFe BLM after the first reflow. In comparison, the NiCuSn IMC can grow more than 2μm in microbumps with the conventional Ni BLM or solder-caped Cu pillar after the first reflow. An excessive lateral “thermal-undercut” has been discovered in NiFe BLM structures during solder reflows due to good edge wettability of NiFe. A dual-layer BLM structure is proposed and demonstrated to mitigate the “thermal-undercut”. Moreover, addition of NiFe layer on a micro-Cu pillar structures have been demonstrated and characterized.
Keywords
integrated circuit packaging; iron alloys; metallurgy; nickel alloys; reflow soldering; three-dimensional integrated circuits; tin alloys; 3D chip stack; FeSn2; NiFe; ball limiting metallurgy; excessive lateral thermal undercut; intermetallic compound; lead-free microbump; micropillar structure; solder caped pillar; Bonding; Electronic components; Gold; Integrated circuit interconnections; Iron; Nickel; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575784
Filename
6575784
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