• DocumentCode
    628704
  • Title

    Atomistic study of welding of carbon nanotube onto metallic substrates

  • Author

    Xiaohui Song ; Mingxiang Chen ; Zhiyin Gan

  • Author_Institution
    Wuhan Nat. Lab. for Optoelectron., Wuhan, China
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    2259
  • Lastpage
    2263
  • Abstract
    Mechanism of carbon nanotube bonding onto the metal substrate is investigated using molecular dynamics in this study. Different temperatures and types of the metal atoms to the carbon nanotube surface are considered. It is shown that there is close relationship between surface melting and contact length of the bonding. The melting firstly occurs on the surface of the metal and the contact length increases with the melting propagating from the open surface to the interior of the metal as the temperature rising. In addition, the wetting property of the metal atoms plays an important role during the bonding of the carbon nanotube onto the metal. The carbon nanotube will be easily welded onto the metal with excellent wetting property. The results indicate that the bonding process of the carbon nanotube onto the metal can be controlled by two ways. First, concentrating energy on the metal surface to enhance the surface melting. Second, selecting the metal with excellent wetting property or effective method is utilized to enhance the wetting property of the metal atoms to the carbon nanotube surface.
  • Keywords
    bonding processes; carbon nanotubes; melting; molecular dynamics method; temperature; welding; wetting; atomistic study; bonding process; carbon nanotube bonding; carbon nanotube surface; contact length; metal atoms; metal surface; metallic substrates; molecular dynamics; open surface; surface melting; temperature rising; temperatures; welding; wetting property; Atomic layer deposition; Carbon nanotubes; Nickel; Surface treatment; Temperature; Welding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575897
  • Filename
    6575897